Dynamics of microwave FET behaviour | Macquarie University ResearchOnline

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Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/102708

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Title: Dynamics of microwave FET behaviour
Related: . Tutorial guide : ISCAS 2001 : the IEEE International Symposium on Circuits and Systems : 6-9 May, 2001, Sydney, Australia, p.2.6.1-2.6.10
DOI: 10.1109/TUTCAS.2001.946944
Publisher: Piscataway, New Jersey : IEEE
Date: 2001
Author/Creator: Parker, Anthony Edward
Author/Creator: Rathmell, James Grantley
Description: The article discusses dispersion in the dynamic characteristics of microwave HEMTs, and the application of a pulsed-bias measurement system. Thermal effects and non-thermal effects are analysed
Description: 10 page(s)
Subject Keyword: high electron mobility transistors
Subject Keyword: microwave field effect transistors
Subject Keyword: microwave measurement
Subject Keyword: semiconductor device measurement
Resource Type: book chapter
Organisation: Macquarie University. Dept. of Electronic Engineering

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