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Dynamics of microwave FET behaviour
Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/102708
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Title
Dynamics of microwave FET behaviour
Related
. Tutorial guide : ISCAS 2001 : the IEEE International Symposium on Circuits and Systems : 6-9 May, 2001, Sydney, Australia, p.2.6.1-2.6.10
DOI
10.1109/TUTCAS.2001.946944
Publisher
Piscataway, New Jersey : IEEE
Date
2001
Author/Creator
Parker, Anthony Edward
Author/Creator
Rathmell, James Grantley
Description
The article discusses dispersion in the dynamic characteristics of microwave HEMTs, and the application of a pulsed-bias measurement system. Thermal effects and non-thermal effects are analysed
Description
10 page(s)
Subject Keyword
high electron mobility transistors
Subject Keyword
microwave field effect transistors
Subject Keyword
microwave measurement
Subject Keyword
semiconductor device measurement
Resource Type
book chapter
Organisation
Macquarie University. Dept. of Electronic Engineering
Identifier
http://hdl.handle.net/1959.14/102708
Identifier
ISBN:0780371135
Identifier
mq-rm-2001013601
Language
eng
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Subject
"Tutorial guide : ISCAS 2001 : the IEEE International Symposium on Circuits and Systems : 6-9 May, 2001, Sydney, Australia"
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